Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors
نویسندگان
چکیده
منابع مشابه
Analytical model of 1D Carbon-based Schottky-Barrier Transistors
Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2017
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2017.2721540